SrTiO3 insulator for low-voltage organic field-effect transistors

被引:1
|
作者
Yan, Hu [1 ]
Okuzaki, Hidenori [1 ]
机构
[1] Univ Yamanashi, Interdisciplinary Grad Sch Med & Engn, Kofu, Yamanashi 4008511, Japan
关键词
Organic semiconductor; Pentacene; Field-effect transistor; High-k insulator; Strontium titanate; THIN-FILM TRANSISTORS; DEPOSITION; TEMPERATURE; DIELECTRICS; PENTACENE; TRANSPORT; POLYMER; SILICON;
D O I
10.1016/j.synthmet.2011.06.002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic field-effect transistors (FETs) are considered to be used as high-end electronics and low-end ones. In the low-end electronics such as radio-frequency identification tags and smart-cards the devices should be battery-powered and then need to operate at a few volts. Majority of the organic FETs reported to date, however, can only operate well at a voltage as high as similar to 100V. Three kinds of approaches have been mainly proposed and studied in order to achieve low-voltage organic FETs. First one is simply using a high-k insulator to obtain certain electric capacitance at lower gate voltages. Second one is using a nanometer-thick self-assembled monolayer of organic compound as the gate dielectric. Third one is using a polymer composite containing ionic liquid. Here we briefly review typical studies using the three approaches to achieve the low-voltage organic FETs in the first part of this subject review, and then we focus on our recent progress in the low-voltage organic FETs mainly using strontium titanate as a high-k insulator in the second part. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码:1781 / 1786
页数:6
相关论文
共 50 条
  • [21] The Effects of Moisture in Low-Voltage Organic Field-Effect Transistors Gated with a Hydrous Solid Electrolyte
    Kaihovirta, Nikolai
    Aarnio, Harri
    Wikman, Carl-Johan
    Wilen, Carl-Eric
    Osterbacka, Ronald
    ADVANCED FUNCTIONAL MATERIALS, 2010, 20 (16) : 2605 - 2610
  • [22] LOW-VOLTAGE VARISTORS BASED ON SRTIO3 CERAMICS
    KUTTY, TRN
    PHILIP, S
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 33 (2-3): : 58 - 66
  • [23] Fluorinated polymer-grafted organic dielectrics for organic field-effect transistors with low-voltage and electrical stability
    Kim, Kyunghun
    Kim, Haekyoung
    Kim, Se Hyun
    Park, Chan Eon
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2015, 17 (26) : 16791 - 16797
  • [24] Low-Voltage Pentacene Field-Effect Transistors Fabricated on High-Dielectric-Constant Strontium Titanate Insulator
    Yan, Hu
    Jo, Toshihiko
    Okuzaki, Hidenori
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (03)
  • [25] High Current Density SmTiO3/SrTiO3 Field-Effect Transistors
    Chandrasekar, Hareesh
    Ahadi, Kaveh
    Razzak, Towhidur
    Stemmer, Susanne
    Rajan, Siddharth
    ACS APPLIED ELECTRONIC MATERIALS, 2020, 2 (02) : 510 - 516
  • [26] Characteristics of SrTiO3 Field-Effect Transistors with DyScO3 Gate Insulators
    Nishio, Kazunori
    Abe, Takuya
    Takahashi, Ryota
    Lippmaa, Mikk
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (12)
  • [27] Semitransparent and Low-Voltage Operating Organic Light-Emitting Field-Effect Transistors Processed at Low Temperatures
    Ullah, Mujeeb
    Wawrzinek, Robert
    Maasoumi, Fatemeh
    Lo, Shih-Chun
    Namdas, Ebinazar B.
    ADVANCED OPTICAL MATERIALS, 2016, 4 (07): : 1022 - 1026
  • [28] Low-voltage C60 organic field-effect transistors with high mobility and low contact resistance
    Zhang, X. -H.
    Kippelen, B.
    APPLIED PHYSICS LETTERS, 2008, 93 (13)
  • [29] Effect of Annealing on Low-Voltage Organic Field-Effect Transistors with P(VDF-TrFE) Gate Dielectric
    Rahi, Sachin
    Raghuwanshi, Vivek
    Saxena, Pulkit
    Konwar, Gargi
    Tiwari, Shree Prakash
    PROCEEDINGS OF THE 2021 IEEE INTERNATIONAL CONFERENCE ON FLEXIBLE AND PRINTABLE SENSORS AND SYSTEMS (FLEPS), 2021,
  • [30] All ink-jet printed low-voltage organic field-effect transistors on flexible substrate
    Feng, Linrun
    Jiang, Chen
    Ma, Hanbin
    Guo, Xiaojun
    Nathan, Arokia
    ORGANIC ELECTRONICS, 2016, 38 : 186 - 192