Process flow development and integration of porous low k for 45 nm node

被引：0

作者：

Naik, Mehul ^{[1
]}

Dai, Huixiong ^{[1
]}

Ordonio, Christopher ^{[1
]}

Yoshida, Naomi ^{[1
]}

Nguyen, Phong ^{[1
]}

Fang, Hongbin ^{[1
]}

Li, Andrew ^{[1
]}

Yang, Hsien-Lung ^{[1
]}

Yu, Jick ^{[1
]}

Demos, Alex ^{[1
]}

Okazaki, Motoya ^{[1
]}

Thothadri, Mani ^{[1
]}

Armacost, Michael ^{[1
]}

Ngai, Chris ^{[1
]}

Macwilliams, Kenneth ^{[1
]}

机构：

[1] Appl Mat Inc, Santa Clara, CA 95054 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Porous low k materials are essential to meet the dielectric constant requirements for 45 and 32nm node technologies. Porous low k materials present unique integration challenges and need optimization and/or development of new processes. This paper reports on the process flow development and integration of a k similar to 2.5 PECVD porous low k. Development required in the area of resist strip, pre-metal cleans, barrier deposition, and CMP are reported. Reliability testing on k similar to 2.5 film shows equivalent results as k similar to 3.0 film.

引用

页码：371 / 377

页数：7

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