Process flow development and integration of porous low k for 45 nm node

被引：0
|
作者：
Naik, Mehul [1 ]
Dai, Huixiong [1 ]
Ordonio, Christopher [1 ]
Yoshida, Naomi [1 ]
Nguyen, Phong [1 ]
Fang, Hongbin [1 ]
Li, Andrew [1 ]
Yang, Hsien-Lung [1 ]
Yu, Jick [1 ]
Demos, Alex [1 ]
Okazaki, Motoya [1 ]
Thothadri, Mani [1 ]
Armacost, Michael [1 ]
Ngai, Chris [1 ]
Macwilliams, Kenneth [1 ]
机构：
[1] Appl Mat Inc, Santa Clara, CA 95054 USA
来源：
ADVANCED METALLIZATION CONFERENCE 2007 (AMC 2007) | 2008年 / 23卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Porous low k materials are essential to meet the dielectric constant requirements for 45 and 32nm node technologies. Porous low k materials present unique integration challenges and need optimization and/or development of new processes. This paper reports on the process flow development and integration of a k similar to 2.5 PECVD porous low k. Development required in the area of resist strip, pre-metal cleans, barrier deposition, and CMP are reported. Reliability testing on k similar to 2.5 film shows equivalent results as k similar to 3.0 film.
引用
收藏
页码：371 / 377
页数：7
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