Silicon carbide epitaxial layers grown on SiC wafers with reduced micropipe density

被引：14

作者：

Rendakova, S ^{[1
]}

Kuznetsov, N ^{[1
]}

Savkina, N ^{[1
]}

Rastegaeva, M ^{[1
]}

Andreev, A ^{[1
]}

Minbaeva, M ^{[1
]}

Morozov, A ^{[1
]}

Dmitriev, V ^{[1
]}

机构：

[1] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

WIDE-BANDGAP SEMICONDUCTORS FOR HIGH POWER, HIGH FREQUENCY AND HIGH TEMPERATURE | 1998年 / 512卷

关键词：

D O I：

10.1557/PROC-512-131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of SiC high-power devices are currently limited by the small area of the devices, which is usually less than 1 sq. mm. In order to increase device area, defect density in SiC epitaxial structures must be reduced. In this paper, we describe properties of silicon carbide epitaxial layers grown on 4H-SiC wafers with reduced micropipe density. These layers were grown by the vacuum sublimation method. Large area Schottky barriers (up to 8 mm(2)) were fabricated on SiC epitaxial layers and characterized.

引用

页码：131 / 136

页数：6

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