Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

被引：4
|
作者：
Wagner, WE [1 ]
White, MH
机构：
[1] Lucent Technol, Bell Tel Labs, Allentown, PA USA
[2] Lehigh Univ, Sherman Fairchild Ctr Solid State Studies, Bethlehem, PA 18015 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 11期
关键词：
enhancement and depletion mode; epitaxial channel; memory; modeling; monolithic; MOSFETs; silicon carbide;
D O I：
10.1109/16.877186
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SIC substrates with NS epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. A buried channel mobility of 230 cm(2)/Vs and an accumulation-mode surface mobility of 45 cm(2)/Vs are extracted at room temperature under a 50% activation of channel donor impurities.
引用
收藏
页码：2214 / 2220
页数：7
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