Characterization of silicon carbide (SiC) epitaxial channel MOSFETs

被引：4

作者：

Wagner, WE ^{[1
]}

White, MH

机构：

[1] Lucent Technol, Bell Tel Labs, Allentown, PA USA

[2] Lehigh Univ, Sherman Fairchild Ctr Solid State Studies, Bethlehem, PA 18015 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2000年 / 47卷 / 11期

关键词：

enhancement and depletion mode; epitaxial channel; memory; modeling; monolithic; MOSFETs; silicon carbide;

D O I：

10.1109/16.877186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon carbide (SiC) epitaxial channel MOSFETs have been fabricated on 6H SIC substrates with NS epitaxial source and drain electrodes. The electrical characteristics have been modeled in sub-pinchoff, depletion and accumulation modes of operation. A buried channel mobility of 230 cm(2)/Vs and an accumulation-mode surface mobility of 45 cm(2)/Vs are extracted at room temperature under a 50% activation of channel donor impurities.

引用

页码：2214 / 2220

页数：7

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