Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures

被引：9

作者：

Luo, B

Johnson, JW

Schoenfeld, D

Pearton, SJ

Ren, F

机构：

[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Nucl & Radiol Engn, Gainesville, FL 32611 USA

[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

来源：

SOLID-STATE ELECTRONICS | 2001年 / 45卷 / 07期

关键词：

GaAs MESFET; irradiation I-V characteristics; TLM;

D O I：

10.1016/S0038-1101(01)00064-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of lambda -ray irradiation on GaAs MESFETs were studied. The lambda -ray irradiation was generated from a Co-60 source. DC characteristics of the MESFETs were used to monitor the effects of radiation, which included source-drain I-V characteristics, gate leakage current, saturation drain current, sub-threshold gate leakage current, and sheet resistance. These changes of device characteristics provided us a useful method to determine the radiation damage coefficient. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：1149 / 1152

页数：4

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