EXPERIMENTAL MICROWAVE-SIGNAL-PROPAGATION STUDY ON GaAs MESFET's USING ESPECIALLY FABRICATED TRANSISTOR STRUCTURES.

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作者：

Fricke, K. ^{[1
]}

Hartnagel, H.L. ^{[1
]}

机构：

[1] Technische Hochschule Darmstadt,, Inst fuer Hochfrequenztechnik,, Darmstadt, West Ger, Technische Hochschule Darmstadt, Inst fuer Hochfrequenztechnik, Darmstadt, West Ger

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| 1600年 / EDL-6期

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摘要：

MICROWAVES

引用

共 3 条

[1] EXPERIMENTAL MICROWAVE-SIGNAL-PROPAGATION STUDY ON GAAS-MESFETS USING ESPECIALLY FABRICATED TRANSISTOR STRUCTURES
FRICKE, K
HARTNAGEL, HL
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) : 151 - 153
[2] Monolithic feedback low noise X-band amplifiers using 0.5-μm GaAs MESFET's: comparative theoretical study and experimental characterization
Pohang Univ of Science and, Technology, Kyungbuk, Korea, Republic of
IEEE J Solid State Circuits, 2 (275-279):
[3] Monolithic feedback low noise X-band amplifiers using 0.5-μm GaAs MESFET's:: Comparative theoretical study and experimental characterization
Jeon, YJ
Jeon, MY
Kim, JM
Jeong, YH
Jeong, DH
Kim, DM
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1998, 33 (02) : 275 - 279

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