Electrical properties of dislocation trails in n-Si

被引：10
|
作者：
Feklisova, O. V. [1 ]
Yakimov, E. B. [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Institutskaya 6, Chernogolovka 142432, Russia
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期
关键词：
D O I：
10.1002/pssc.200675464
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The deep level centers introduced by plastic deformation at 620 degrees C in n-type silicon are quantitatively studied by the electron beam induced current and deep level transient spectroscopy techniques. It is shown that the most efficient deformation-induced electrically active defects in Si are located in the dislocation trails. The deep level spectrum associated with these defects is obtained. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：3105 / +
页数：2
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