Electrical properties of dislocation trails in n-Si

被引：10

作者：

Feklisova, O. V. ^{[1
]}

Yakimov, E. B. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Institutskaya 6, Chernogolovka 142432, Russia

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 8 | 2007年 / 4卷 / 08期

关键词：

D O I：

10.1002/pssc.200675464

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deep level centers introduced by plastic deformation at 620 degrees C in n-type silicon are quantitatively studied by the electron beam induced current and deep level transient spectroscopy techniques. It is shown that the most efficient deformation-induced electrically active defects in Si are located in the dislocation trails. The deep level spectrum associated with these defects is obtained. (c) 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3105 / +

页数：2

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