Single event upset cross sections at various data rates

被引:40
|
作者
Reed, RA
Carts, MA
Marshall, PW
Marshall, CJ
Buchner, S
LaMacchia, M
Mathes, B
McMorrow, D
机构
[1] SFA INC,LARGO,MD
[2] MOTOROLA GSTG,SCOTTSDALE,AZ
关键词
D O I
10.1109/23.556878
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present data which show that Single Event Upset (SEU) cross section varies linearly with frequency for most devices tested. We show that the SEU cross section can increase dramatically away from a linear relationship when the test setup is not optimized, or when testing near the maximum operating frequency. We also observe non-linear behavior in some complex circuit topologies. Knowledge of the relationship between SEU cross section and frequency is important for estimates of on-orbit SEU rates.
引用
收藏
页码:2862 / 2867
页数:6
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