THz generation using 800 to 1550 nm excitation of photoconductors

被引：0

作者：

Wood, C. D. ^{[1
]}

Hatem, O. ^{[1
]}

Cunningham, J. E. ^{[1
]}

Linfield, E. H. ^{[1
]}

Davies, A. G. ^{[1
]}

Cannard, P. J. ^{[2
]}

Moodie, D. G. ^{[2
]}

Pate, M. ^{[2
]}

Robertson, M. J. ^{[2
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

[2] CIP Technol, Ipswich IP5 3RE, Suffolk, England

来源：

2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年

关键词：

TERAHERTZ RADIATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the efficient generation of terahertz (THz) radiation from Fe-doped InGaAs-based photoconductive antennas. We present time-domain data showing generation of pulsed THz radiation from antennas fabricated on two different wafers, optimized to maximize the near-infrared-to-THz conversion efficiency. Detection was performed using both (110) ZnTe and GaP crystals, with pump and probe wavelengths being adjusted from 800 nm to 1550 nm using a cavity-tuned OPO pumped by a pulsed near-infrared Ti:Sapphire laser.

引用

页码：641 / 643

页数：3

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