THz generation using 800 to 1550 nm excitation of photoconductors

被引：0

作者：

Wood, C. D. ^{[1
]}

Hatem, O. ^{[1
]}

Cunningham, J. E. ^{[1
]}

Linfield, E. H. ^{[1
]}

Davies, A. G. ^{[1
]}

Cannard, P. J. ^{[2
]}

Moodie, D. G. ^{[2
]}

Pate, M. ^{[2
]}

Robertson, M. J. ^{[2
]}

机构：

[1] Univ Leeds, Sch Elect & Elect Engn, Leeds LS2 9JT, W Yorkshire, England

[2] CIP Technol, Ipswich IP5 3RE, Suffolk, England

来源：

2009 34TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES, VOLS 1 AND 2 | 2009年

关键词：

TERAHERTZ RADIATION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate the efficient generation of terahertz (THz) radiation from Fe-doped InGaAs-based photoconductive antennas. We present time-domain data showing generation of pulsed THz radiation from antennas fabricated on two different wafers, optimized to maximize the near-infrared-to-THz conversion efficiency. Detection was performed using both (110) ZnTe and GaP crystals, with pump and probe wavelengths being adjusted from 800 nm to 1550 nm using a cavity-tuned OPO pumped by a pulsed near-infrared Ti:Sapphire laser.

引用

页码：641 / 643

页数：3

共 50 条

[31] Advances in 1550-nm Driven THz, GaAs Photoconductive Switches
Mingardi, A.
Zhang, W-D
Brown, E. R.
2017 42ND INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2017,
[32] Low-Temperature-grown GaAs photoconductors suitable for 1550nm-wavelength illumination
Tannoury, C.
Billet, M.
Coinon, C.
Lampin, J-F
Peytavit, E.
2021 46TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), 2021,
[33] Supercontinuum generation in a photonic crystal fibre using picosecond pulses at 1550 nm
Andersen, PA
Peucheret, C
Hilligsoe, KM
Berg, KS
Hansen, KP
Jeppesen, P
ICTON 2003: 5TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 1, PROCEEDINGS, 2003, : 66 - 69
[34] High power terahertz generation using 1550nm plasmonic photomixers
Berry, Christopher W.
Hashemi, Mohammad R.
Preu, Sascha
Lu, Hong
Gossard, Arthur C.
Jarrahi, Mona
APPLIED PHYSICS LETTERS, 2014, 105 (01)
[35] Low-temperature-grown gallium arsenide photoconductors with subpicosecond carrier lifetime and photoresponse reaching 25 mA/W under 1550 nm CW excitation
Tannoury, C.
Billet, M.
Coinon, C.
Lampin, J-F.
Peytavit, E.
ELECTRONICS LETTERS, 2020, 56 (17) : 897 - 898
[36] Evolution of THz Impulse Imaging Radar to 1550-nm Photoconductive Switches
Brown, E. R.
Zhang, W-D.
Feldman, A.
Harvey, T.
Mirin, R. P.
Sung, S.
Grundfest, W. S.
Taylor, Z. D.
IMAGE SENSING TECHNOLOGIES: MATERIALS, DEVICES, SYSTEMS, AND APPLICATIONS III, 2016, 9854
[37] Arsenide-based Terahertz Materials and Devices for 800 and 1550 nm Excitations
Missous, M.
Kostakis, I.
Saeedkia, D.
NINTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, 2012, : 63 - 69
[38] Generation of 0.19-mJ THz pulses in LiNbO3 driven by 800-nm femtosecond laser
Zhu, Li-Guo
Zhong, Sen-Cheng
Li, Jun
Zhai, Zhao-Hui
Li, Jiang
Zhou, Ping-Wei
Zhao, Jian-Heng
Li, Ze-Ren
2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), 2016,
[39] Generation of 0.19-mJ THz pulses in LiNbO3 driven by 800-nm femtosecond laser
Zhong, Sen-Cheng
Li, Jun
Zhai, Zhao-Hui
Zhu, Li-Guo
Li, Jiang
Zhou, Ping-Wei
Zhao, Jian-Heng
Li, Ze-Ren
OPTICS EXPRESS, 2016, 24 (13): : 14828 - 14835
[40] Metasurface-Enhanced Photon Upconversion upon 1550 nm Excitation
Ahiboz, Doguscan
Andresen, Elina
Manley, Phillip
Resch-Genger, Ute
Wuerth, Christian
Becker, Christiane
ADVANCED OPTICAL MATERIALS, 2021, 9 (24):

← 1 2 3 4 5 →