Polycrystalline Silicon Thin-Film Transistor Using Xe Flash-Lamp Annealing

被引：19
|
作者：
Saxena, Saurabh [1 ]
Kim, Dong Cheol [2 ]
Park, Jeang Hun [2 ]
Jang, Jin [1 ]
机构：
[1] Kyung Hee Univ, Adv Display Res Ctr, Seoul 130701, South Korea
[2] NanoFab Ctr, Varied Innovat Technol, Gyeonggi Do 443270, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 11期
关键词：
Crystallization; excimer-laser annealing (ELA); Flash-lamp annealing (FLA); low-temperature polycrystalline silicon (poly-Si) (LTPS); thin-film transistors (TFTs); AMORPHOUS-SILICON; SI FILMS; CRYSTALLIZATION; GLASS;
D O I：
10.1109/LED.2010.2064282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report a high-performance thin-film transistor (TFT) using polycrystalline silicon (poly-Si) by short-pulse Flash-lamp annealing of amorphous silicon. Large grains of average size of similar to 15 mu m with wide branchlike grain boundaries were found in the poly-Si, and there was no amorphous phase inside. The fabricated p-channel poly-Si TFT on the grain exhibited field-effect mobility of 138 cm(2)/V . sec, a threshold voltage of-1.3 V, and an on/off current ratio of 10(8).
引用
收藏
页码：1242 / 1244
页数：3
相关论文
共 50 条
  • [31] 2-DIMENSIONAL DEVICE SIMULATION FOR POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR
    YAMADA, S
    YOKOYAMA, S
    KOYANAGI, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (12): : L2388 - L2391
  • [32] SUBTHRESHOLD MODEL OF A POLYCRYSTALLINE SILICON THIN-FILM FIELD-EFFECT TRANSISTOR
    FAUGHNAN, B
    APPLIED PHYSICS LETTERS, 1987, 50 (05) : 290 - 292
  • [33] Low-temperature polycrystalline silicon thin film transistor flash memory with ferritin
    Ichikawa, Kazunori
    Uraoka, Yukiharu
    Punchaipetch, Prakaipetch
    Yano, Hiroshi
    Hatayama, Tomoaki
    Fuyuki, Takashi
    Yamashita, Ichiro
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (33-35): : L804 - L806
  • [34] POLYCRYSTALLINE SILICON THIN-FILM TRANSISTORS
    BROTHERTON, SD
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (06) : 721 - 738
  • [35] Polycrystalline silicon thin-film transistors
    Wagner, S
    Wu, M
    Min, BGR
    Cheng, IC
    POLYCRYSTALLINE SEMICONDUCTORS IV MATERIALS, TECHNOLOGIES AND LARGE AREA ELECTRONICS, 2001, 80-81 : 325 - 336
  • [36] Impact of Underwater Laser Annealing on Polycrystalline Silicon Thin-Film Transistor for Inactivation of Electrical Defects at Super Low Temperature
    Machida, Emi
    Horita, Masahiro
    Yamasaki, Koji
    Ishikawa, Yasuaki
    Uraoka, Yukiharu
    Ikenoue, Hiroshi
    JOURNAL OF DISPLAY TECHNOLOGY, 2013, 9 (09): : 741 - 746
  • [37] Ultrasonic spray coating and flash lamp annealing of silicon nanoparticle dispersions for silicon thin film formation
    Buechter, Benjamin
    Seidel, Falko
    Fritzsche, Ronny
    Toader, Iulia
    Buschbeck, Roy
    Jakob, Alexander
    Schulze, Steffen
    Freitag, Hans
    Lang, Heinrich
    Hietschold, Michael
    Zahn, Dietrich R. T.
    Mehring, Michael
    JOURNAL OF MATERIALS SCIENCE, 2014, 49 (23) : 7979 - 7990
  • [38] Ultrasonic spray coating and flash lamp annealing of silicon nanoparticle dispersions for silicon thin film formation
    Benjamin Büchter
    Falko Seidel
    Ronny Fritzsche
    Iulia Toader
    Roy Buschbeck
    Alexander Jakob
    Steffen Schulze
    Hans Freitag
    Heinrich Lang
    Michael Hietschold
    Dietrich R. T. Zahn
    Michael Mehring
    Journal of Materials Science, 2014, 49 : 7979 - 7990
  • [39] EFFECT OF ANNEALING ON SEMICONDUCTOR IN A THIN-FILM TRANSISTOR
    NORIAN, KH
    THIN SOLID FILMS, 1977, 47 (02) : 195 - 201
  • [40] Development of vacuum application solar simulation Xe flash-lamp array
    Ren J.-Y.
    Su K.-Q.
    Wang B.
    Chen C.-Z.
    Zhang J.
    Guangxue Jingmi Gongcheng/Optics and Precision Engineering, 2010, 18 (08): : 1699 - 1706
12345