Low-temperature polycrystalline silicon thin film transistor flash memory with ferritin

被引：9

作者：

Ichikawa, Kazunori

Uraoka, Yukiharu

Punchaipetch, Prakaipetch

Yano, Hiroshi

Hatayama, Tomoaki

Fuyuki, Takashi

Yamashita, Ichiro

机构：

[1] Nara Inst Sci & Technol, Nara 6300192, Japan

[2] Matsushita Elect Ind Co Ltd, Adv Technol Res Labs, Kyoto 6190237, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2007年 / 46卷 / 33-35期

关键词：

nanodots; ferritin; floating gate; flash memory; thin film transistor (TFT); bio-nano-process; system-on-panel (SOP);

D O I：

10.1143/JJAP.46.L804

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low-temperature polycrystalline silicon (poly-Si) thin film transistor (LTPS-TFT) flash memory is a potential candidate key component of system-on-panet (SOP). We have proposed the "bio-nano-process" for the fabrication of nanodots using biotechnology. In this study, we have successfully fabricated and developed LTPS-TFT flash memory with biomineralized inorganic nanodots for the first time. High-density homogeneous nanodots were made to adsorb on a silicon film using ferritin protein without the use of vacuum systems at high temperature. Electron charging and discharging in the dots were clearly confirmed from the transient behavior of the transfer curve at room temperature. This fabrication technique is promising for the development of flash memory for SOP.

引用

页码：L804 / L806

页数：3

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