Nitridation and contrast of B4C/La interfaces and X-ray multilayer optics

被引:29
|
作者
Tsarfati, T. [1 ]
van de Kruijs, R. W. E. [1 ]
Zoethout, E. [1 ]
Louis, E. [1 ]
Bijkerk, F. [1 ,2 ]
机构
[1] FOM Inst Plasma Phys Rijnhuizen, Nieuwegein, Netherlands
[2] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands
关键词
Multilayer; Lithography; X-FEL; GIXR; TEM; XPS; STRUCTURAL PHASE-STABILITY; DEPTH-RESOLUTION; ENHANCEMENT; GENERATION; MIRRORS; GROWTH;
D O I
10.1016/j.tsf.2010.04.088
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical diffusion and interlayer formation in thin layers and at interfaces is of increasing influence in nanoscopic devices such as nano-electronics, magneto-optical storage and multilayer X-ray optics. We show that with the nitridation of reactive B4C/La interfaces, both the chemical and optical contrast can be greatly enhanced. Although interaction and diffusion of N-2 from the substrate towards the adlayer does occur, this surfactant mediated growth contributes to chemical and optical interface properties that enable major reflectivity improvements of multilayer optics for 6.7<lambda<7.0 nm. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:7249 / 7252
页数:4
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