Evaluation of accuracy of manufacturers models of SiC MOSFETs

被引：1

作者：

Bisewski, Damian ^{[1
]}

Lubicz-Krosnicka, Emilia ^{[1
]}

机构：

[1] Uniwersytet Morski Gdyni, Katedra Elektroniki Morskiej, Ul Morska 81-87, PL-81225 Gdynia, Poland

来源：

PRZEGLAD ELEKTROTECHNICZNY | 2021年 / 97卷 / 12期

关键词：

modelling; MOSFET; SiC; SPICE;

D O I：

10.15199/48.2021.12.39

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The paper concerns on modelling of the characteristics and parameters of power MOSFETs made of silicon carbide. The current commercial status of SiC-MOSFETs and information on the availability of manufacturers models of considered transistors have been discussed. The structure and principle of operation of the models offered by selected manufacturers of SiC-MOSFETs have been presented. An evaluation of accuracy of these models have been presented by comparing the simulation results and catalogue characteristics.

引用

页码：187 / 190

页数：4

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