Evaluation of accuracy of manufacturers models of SiC MOSFETs

被引：1
|
作者：
Bisewski, Damian [1 ]
Lubicz-Krosnicka, Emilia [1 ]
机构：
[1] Uniwersytet Morski Gdyni, Katedra Elektroniki Morskiej, Ul Morska 81-87, PL-81225 Gdynia, Poland
来源：
PRZEGLAD ELEKTROTECHNICZNY | 2021年 / 97卷 / 12期
关键词：
modelling; MOSFET; SiC; SPICE;
D O I：
10.15199/48.2021.12.39
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper concerns on modelling of the characteristics and parameters of power MOSFETs made of silicon carbide. The current commercial status of SiC-MOSFETs and information on the availability of manufacturers models of considered transistors have been discussed. The structure and principle of operation of the models offered by selected manufacturers of SiC-MOSFETs have been presented. An evaluation of accuracy of these models have been presented by comparing the simulation results and catalogue characteristics.
引用
收藏
页码：187 / 190
页数：4
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