A Zinc Dioxide -on- Silicon MEMS Resonator for Narrowband Filtering

被引：0

作者：

Ossama, Mortada ^{[1
]}

Pierre, Blondy ^{[1
]}

Aurelian, Crunteanu ^{[1
]}

Matthieu, Chatras ^{[1
]}

Orlianges, Jean-Christophe ^{[2
]}

机构：

[1] Univ Limoges, CNRS, Micro & Nanotechnol Optoelect & Microwave Compone, XLIM UMR 7252, F-87060 Limoges, France

[2] Univ Limoges, CNRS, SPCTS UMR 7513, F-87068 Limoges, France

来源：

2014 21ST IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS) | 2014年

关键词：

Microresonator; zinc dioxide; piezoelectric;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a thin-film piezoelectric-onsubstrate (TPoS) micro-resonator with a resonant frequency around 770MHz. This high frequency operation has been enabled through reducing inter-electrode gap. After optimization of geometrical design and fabrication process, resonators was measured showing an electromechanical coupling coefficient k(t)(2) of 2.2%, a high quality factor Q(m) of 1460 and a low motional resistance (R-m approximate to 21 Omega). Experimental data have shown good agreement with theoretical computations.

引用

页码：586 / 589

页数：4

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