New Short Circuit Failure Mechanism for 1.2kV 4H-SiC MOSFETs and JBSFETs

被引：0

作者：

Han, Kijeong ^{[1
]}

Kanale, Ajit ^{[1
]}

Baliga, B. J. ^{[1
]}

Ballard, Bahji ^{[1
]}

Morgan, Adam ^{[1
]}

Hopkins, Douglas C. ^{[1
]}

机构：

[1] North Carolina State Univ, PowerAmer Inst, Raleigh, NC 27695 USA

来源：

2018 IEEE 6TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) | 2018年

关键词：

Silicon Carbide; 4H-SiC; MOSFET; JBSFET; Short Circuit; Ruggedness; Robustness; Reliability; Failure Mechanism; RUGGEDNESS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The short circuit (SC-SOA) capability of power devices is crucial for power systems. In this paper, 1.2 kV SiC MOSFETs and JBSFETs are characterized, and their SC-SOA behavior was tested and analyzed. Due to the lower saturated drain current, the JBSFETs were found to have superior SC-SOA compared with MOSFETs despite the integrated Schottky contact. A new short circuit failure mechanism related to melting of the top Al metallization is proposed based up on nonisothermal TCAD numerical simulations supported with SEM measurements of failed die using Energy Dispersive X-ray Spectroscopy (EDS) analysis.

引用

页码：108 / 113

页数：6

共 50 条

[41] Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs
Zhu, Shengnan
Liu, Tianshi
White, Marvin H.
Agarwal, Anant K.
Salemi, Arash
Sheridan, David
2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
[42] Characterization of 1.2 kV 4H-SiC Power MOSFETs and Si IGBTs at Cryogenic and High Temperatures
Tian, Kai
Qi, Jinwei
Mao, Zhangsong
Yang, Song
Song, Wenjie
Yang, Mingchao
Zhang, Anping
2017 14TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING (SSLCHINA) : INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS (IFWS), 2017, : 140 - 143
[43] The impact of the P-pillar structure design on Breakdown Voltage for 1.2kV 4H-SiC Superjunction DMOSFET
Lee, Yuan-Chen
Lin, Kai-Hsun
Lee, Kung-Yen
2021 IEEE INTERNATIONAL FUTURE ENERGY ELECTRONICS CONFERENCE (IFEEC), 2021,
[44] Investigation of the mechanism of gate voltage oscillation in 1.2kV IGBT under short circuit condition
Kikuchi, Takuo
Nakamura, Kazutoshi
Takao, Kazuto
PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 503 - 507
[45] Investigations on Degradation and Optimization of 1.2kV 4H-SiC MOSFET Under Repetitive Unclamped Inductive Switching Stress
Liu, Siyang
Sun, Weifeng
Qian, Qinsong
Gu, Chunde
Huang, Yu
Bai, Song
Chen, Gang
Huang, Runhua
Tao, Yonghong
Liu, Ao
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 205 - 208
[46] Short-circuit robustness of retrograde channel doping 1.2 kV SiC MOSFETs
Reigosa, Paula Diaz
Schulz, Nicola
Minamisawa, Renato
MICROELECTRONICS RELIABILITY, 2021, 120
[47] Short-circuit Failure Mechanism of SiC Power MOSFETs
Romano, G.
Maresca, L.
Riccio, M.
d'Alessandro, V.
Breglio, G.
Irace, A.
Fayyaz, A.
Castellazzi, A.
2015 IEEE 27TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & IC'S (ISPSD), 2015, : 345 - 348
[48] Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness
Liu, Hao
Wei, Jiaxing
Wei, Zhaoxiang
Liu, Siyang
Shi, Longxing
ELECTRONICS, 2023, 12 (11)
[49] Measurements and Review of Failure Mechanisms and Reliability Constraints of 4H-SiC Power MOSFETs Under Short Circuit Events
Yu, Renze
Jahdi, Saeed
Alatise, Olayiwola
Ortiz-Gonzalez, Jose
Munagala, Sai Priya
Simpson, Nick
Mellor, Phil
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2023, 23 (04) : 544 - 563
[50] Failure Mechanism Analysis of 1.2 kV SiC MOSFETs Under Low-Temperature Storage, Power Cycling, and Short-Circuit Interactions
Wang, Pengkai
Chen, Yuan
Zhu, Xinyu
He, Hu
Li, Junhui
IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2024, 12 (05) : 4562 - 4572

← 1 2 3 4 5 →