The impact of the P-pillar structure design on Breakdown Voltage for 1.2kV 4H-SiC Superjunction DMOSFET

1.2kV-class 4H-SiC super junction (SJ) DMOSFET was designed and optimized in this work. Several P-pillar structures and dosage variation were used to target the charge balance condition in order to optimize breakdown voltage (BV) with low specific on-resistance (R-on,R-sp). Vertical electric field distribution of SJ DMOSFET performs a relatively uniform distribution compared with planer DMOSFET. Horizontal electric field distribution shows a peak value at the junction of N and P pillar, while the electric field distribution decline rate affects the final BV value effectively. In this study, we demonstrated the impact of adjusting the P-pillar width and scaling down the device on BV through a series of electric field analysis.