Effect of incorporation of reduced graphene oxide on ZnO-based dye-sensitized solar cells

被引：18

作者：

Song, Jun-Ling ^{[1
]}

Wang, Xiu ^{[2
]}

机构：

[1] Jiangnan Univ, China Australia Joint Res Ctr Funct Mol Mat, Sch Chem & Mat Engn, Wuxi 214122, Peoples R China

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 81卷

基金：

中国国家自然科学基金;

关键词：

Grain boundary junctions; Nanocrystalline materials; Reduced graphene oxide; Schottky barrier; Solar energy materials; ZnO Semiconductors; PERFORMANCE; NANOPARTICLES;

D O I：

10.1016/j.physe.2016.02.005

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Here, we demonstrate a facile method to improve the cell performance of ZnO-based dye sensitized solar cell by incorporating different amount of reduced graphene oxide (rGO). Overall photo-to-current conversion-efficiency (PCE) of the device 3 with 0.75 mL rGO exhibits a 1.3 times improvement compared to bare ZnO. The electrochemical impedance spectroscopy (EIS) measurements show that the enhancement could be attributed to the improvement of electron transport/injection and the decrease of the charge recombination in the device, which arise from the formation of rGO-based Schottky junction in ZnO-photoanode. (C) 2016 Elsevier B.V. All rights reserved.

引用

页码：14 / 18

页数：5

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