Effect of incorporation of reduced graphene oxide on ZnO-based dye-sensitized solar cells

被引：18
|
作者：
Song, Jun-Ling [1 ]
Wang, Xiu [2 ]
机构：
[1] Jiangnan Univ, China Australia Joint Res Ctr Funct Mol Mat, Sch Chem & Mat Engn, Wuxi 214122, Peoples R China
[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2016年 / 81卷
基金：
中国国家自然科学基金;
关键词：
Grain boundary junctions; Nanocrystalline materials; Reduced graphene oxide; Schottky barrier; Solar energy materials; ZnO Semiconductors; PERFORMANCE; NANOPARTICLES;
D O I：
10.1016/j.physe.2016.02.005
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Here, we demonstrate a facile method to improve the cell performance of ZnO-based dye sensitized solar cell by incorporating different amount of reduced graphene oxide (rGO). Overall photo-to-current conversion-efficiency (PCE) of the device 3 with 0.75 mL rGO exhibits a 1.3 times improvement compared to bare ZnO. The electrochemical impedance spectroscopy (EIS) measurements show that the enhancement could be attributed to the improvement of electron transport/injection and the decrease of the charge recombination in the device, which arise from the formation of rGO-based Schottky junction in ZnO-photoanode. (C) 2016 Elsevier B.V. All rights reserved.
引用
收藏
页码：14 / 18
页数：5
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