Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at room temperature grown by MOCVD with Bi doping

被引：0
|
作者：
Zvonkov, BN [1 ]
Karpovich, IA [1 ]
Baidus, NV [1 ]
Filatov, DO [1 ]
Gushina, YY [1 ]
Morozov, SV [1 ]
Levichev, SB [1 ]
机构：
[1] Univ Nizhny Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603600, Russia
来源：
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Doping of InAs quantum dots during growth by Metal Organic Chemical Vapor Deposition by Bi depresses coalescence of the nanoclusters and improves the uniformity of the quantum dot size distribution, By this method the quantum dot structures emitting at 1.46 mum at room temperature with the emission linewidth as narrow as 25 meV have been obtained.
引用
收藏
页码：397 / 398
页数：2
相关论文
共 50 条
  • [31] Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates
    Bennour, M.
    Bouzaiene, L.
    Saidi, F.
    Sfaxi, L.
    Maaref, H.
    JOURNAL OF NANOPARTICLE RESEARCH, 2011, 13 (12) : 6527 - 6535
  • [32] Temperature dependence of optical properties of InAs quantum dots grown on GaAs(113)A and (115)A substrates
    M. Bennour
    L. Bouzaïene
    F. Saidi
    L. Sfaxi
    H. Maaref
    Journal of Nanoparticle Research, 2011, 13 : 6527 - 6535
  • [33] Optical recombination-emission characteristics and surface morphologies of InAs quantum dots grown on misoriented GaAs substrate by MOCVD
    Hsu, MY
    Tang, SF
    Chiang, CD
    Su, CC
    Wang, LC
    Kuo, CT
    THIN SOLID FILMS, 2006, 498 (1-2) : 183 - 187
  • [34] Effect of boron on the surface and optical properties for (B)InAs/GaAs self-assembled quantum dots grown by MOCVD
    Wang, Pengyu
    Wang, Qi
    Guo, Xin
    Jia, Zhigang
    Li, Tianhe
    Ren, Xiaomin
    Cai, Shiwei
    OPTOELECTRONIC MATERIALS AND DEVICES VI, 2011, 8308
  • [35] Photoluminescence from InAs Quantum Dots Buried Under Low-Temperature-Grown GaAs
    Kosarev, Alexander
    Bert, Nikolay
    Nevedomskii, Vladimir
    Chaldyshev, Vladimir
    Preobrazhenskii, Valerii
    Putyato, Mikhail
    Semyagin, Boris
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2019, 256 (05):
  • [36] Stacking of multilayer InAs quantum dots with combination capping of InAlGaAs and high temperature grown GaAs
    Suseendran, J.
    Halder, N.
    Chakrabarti, S.
    Mishima, T. D.
    Stanley, C. R.
    SUPERLATTICES AND MICROSTRUCTURES, 2009, 46 (06) : 900 - 906
  • [37] Growth of InAs(Bi)/GaAs Quantum Dots under a Bismuth Surfactant at High and Low Temperature
    Bailey, N. J.
    Carr, M. R.
    David, J. P. R.
    Richards, R. D.
    JOURNAL OF NANOMATERIALS, 2022, 2022
  • [38] Light emitting diodes based on self-assembled InAs quantum dots grown on GaAs (311)A surfaces using only Si as a doping materia
    Alves, MV
    Semenzato, MJ
    Marega, E
    Gonzalez-Borrero, PP
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 2002, 232 (01): : 32 - 36
  • [39] Anomalous temperature dependence of the carrier capture time into InAs/GaAs quantum dots grown on a quantum wire array
    Sreenivasan, D.
    Haverkort, J. E. M.
    Ipek, O.
    Martinez-Vazquez, B.
    Eijkemans, T. J.
    Mano, T.
    Notzel, R.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 1879 - 1881
  • [40] Dependence of bimodal size distribution on temperature and optical properties of InAs quantum dots grown on vicinal GaAs (1-00) substrates by using MOCVD
    Liang Song
    Zhu Hong-Liang
    Pan Jiao-Qing
    Wang Wei
    CHINESE PHYSICS, 2006, 15 (05): : 1114 - 1119
12345