Extremely uniform InAs/GaAs quantum dots emitting at 1.46 mkm at room temperature grown by MOCVD with Bi doping

被引：0

作者：

Zvonkov, BN ^{[1
]}

Karpovich, IA ^{[1
]}

Baidus, NV ^{[1
]}

Filatov, DO ^{[1
]}

Gushina, YY ^{[1
]}

Morozov, SV ^{[1
]}

Levichev, SB ^{[1
]}

机构：

[1] Univ Nizhny Novgorod, Tech Phys Res Inst, Nizhnii Novgorod 603600, Russia

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Doping of InAs quantum dots during growth by Metal Organic Chemical Vapor Deposition by Bi depresses coalescence of the nanoclusters and improves the uniformity of the quantum dot size distribution, By this method the quantum dot structures emitting at 1.46 mum at room temperature with the emission linewidth as narrow as 25 meV have been obtained.

引用

页码：397 / 398

页数：2

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