InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide

被引：25
|
作者：
Li, X. [1 ]
Liu, H. Y. [1 ]
Liu, S. [1 ]
Ni, X. [1 ]
Wu, M. [1 ]
Avrutin, V. [1 ]
Izyumskaya, N. [1 ]
Ozgur, U. [1 ]
Morkoc, H. [1 ]
机构：
[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 08期
基金：
美国国家科学基金会;
关键词：
light-emitting diodes; InGaN; ZnO; transparent conducting oxides; electroluminescence; degradation; RESISTANCE OHMIC CONTACTS; ELECTRODE;
D O I：
10.1002/pssa.201026053
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact p-electrode (GZO-LEDs). For comparison, the LEDs with semi-transparent thin Ni/Au (5/5 nm) current spreading layers were also fabricated on the same wafer (Ni/Au-LEDs). Unpackaged GZO-LEDs with 200 mu m diameter showed negligible light output degradation for up to 30 min under CW current of 100 mA (corresponding to a 318 A/cm(2) current density), while the light output for Ni/Au-LEDs was reduced by 85% after only 5 min of operation due to the severe current crowding effect (or current filamentation). Pulsed electroluminescence (EL) measurements revealed that the GZO-LEDs exhibit 50% higher EL intensity for the same current levels. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1993 / 1996
页数：4
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