InGaN based light emitting diodes with Ga doped ZnO as transparent conducting oxide

被引：25

作者：

Li, X. ^{[1
]}

Liu, H. Y. ^{[1
]}

Liu, S. ^{[1
]}

Ni, X. ^{[1
]}

Wu, M. ^{[1
]}

Avrutin, V. ^{[1
]}

Izyumskaya, N. ^{[1
]}

Ozgur, U. ^{[1
]}

Morkoc, H. ^{[1
]}

机构：

[1] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2010年 / 207卷 / 08期

基金：

美国国家科学基金会;

关键词：

light-emitting diodes; InGaN; ZnO; transparent conducting oxides; electroluminescence; degradation; RESISTANCE OHMIC CONTACTS; ELECTRODE;

D O I：

10.1002/pssa.201026053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the electrical and optical properties of InGaN based light emitting diodes (LEDs) utilizing Ga doped ZnO (GZO) grown by molecular beam epitaxy (MBE) as a highly transparent contact p-electrode (GZO-LEDs). For comparison, the LEDs with semi-transparent thin Ni/Au (5/5 nm) current spreading layers were also fabricated on the same wafer (Ni/Au-LEDs). Unpackaged GZO-LEDs with 200 mu m diameter showed negligible light output degradation for up to 30 min under CW current of 100 mA (corresponding to a 318 A/cm(2) current density), while the light output for Ni/Au-LEDs was reduced by 85% after only 5 min of operation due to the severe current crowding effect (or current filamentation). Pulsed electroluminescence (EL) measurements revealed that the GZO-LEDs exhibit 50% higher EL intensity for the same current levels. (c) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：1993 / 1996

页数：4

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