Random telegraph noise from resonant tunnelling at low temperatures

被引：17

作者：

Li, Zuo ^{[1
]}

Sotto, Moise ^{[1
]}

Liu, Fayong ^{[1
]}

Husain, Muhammad Khaled ^{[1
]}

Yoshimoto, Hiroyuki ^{[2
]}

Sasago, Yoshitaka ^{[2
]}

Hisamoto, Digh ^{[2
]}

Tomita, Isao ^{[1
]}

Tsuchiya, Yoshishige ^{[1
]}

Saito, Shinichi ^{[1
]}

机构：

[1] Univ Southampton, Fac Phys Sci & Engn, Dept Elect & Comp Sci, Sustainable Elect Technol, Southampton, Hants, England

[2] Hitachi Ltd, Res & Dev Grp, 1-280 Higashikoigakubo, Kokubunji, Tokyo 1858601, Japan

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT-TRANSISTORS; 1/F NOISE; THERMAL AGITATION; CHARGE; MODEL; CAPACITANCE; LIMITS; FLASH;

D O I：

10.1038/s41598-017-18579-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that the RTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.

引用

页数：9

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