Random telegraph noise from resonant tunnelling at low temperatures

被引：17

作者：

Li, Zuo ^{[1
]}

Sotto, Moise ^{[1
]}

Liu, Fayong ^{[1
]}

Husain, Muhammad Khaled ^{[1
]}

Yoshimoto, Hiroyuki ^{[2
]}

Sasago, Yoshitaka ^{[2
]}

Hisamoto, Digh ^{[2
]}

Tomita, Isao ^{[1
]}

Tsuchiya, Yoshishige ^{[1
]}

Saito, Shinichi ^{[1
]}

机构：

[1] Univ Southampton, Fac Phys Sci & Engn, Dept Elect & Comp Sci, Sustainable Elect Technol, Southampton, Hants, England

[2] Hitachi Ltd, Res & Dev Grp, 1-280 Higashikoigakubo, Kokubunji, Tokyo 1858601, Japan

来源：

SCIENTIFIC REPORTS | 2018年 / 8卷

基金：

英国工程与自然科学研究理事会;

关键词：

FIELD-EFFECT-TRANSISTORS; 1/F NOISE; THERMAL AGITATION; CHARGE; MODEL; CAPACITANCE; LIMITS; FLASH;

D O I：

10.1038/s41598-017-18579-1

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is considered to be triggered by just one electron or one hole, and its importance is recognised upon the aggressive scaling. However, the detailed nature of the charge trap remains to be investigated due to the difficulty to find out the exact device, which shows the RTN feature over statistical variations. Here, we show the RTN can be observed from virtually all devices at low temperatures, and provide a methodology to enable a systematic way to identify the bias conditions to observe the RTN. We found that the RTN was observed at the verge of the Coulomb blockade in the stability diagram of a parasitic Single-Hole-Transistor (SHT), and we have successfully identified the locations of the charge traps by measuring the bias dependence of the RTN.

引用

页数：9

共 50 条

[21] The Amplitude of Random Telegraph Noise: Scaling Implications
Cheung, Kin P.
Campbell, J. P.
Potbhare, S.
Oates, A.
2012 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2012,
[22] Random telegraph noise in magnetically driven garnets
Sponsel, Robert
Hamann, Aaron
Dahlberg, E. Dan
PHYSICAL REVIEW B, 2021, 103 (13)
[23] Random telegraph noise in carbon nanotubes and peapods
Jhang, S. H.
Lee, S. W.
Lee, D. S.
Yu, H. Y.
U., Dettlaff
Campbell, E. E. B.
Roth, S.
Park, Y. W.
CURRENT APPLIED PHYSICS, 2006, 6 (06) : 987 - 991
[24] A procedure for extracting 1/f noise from random telegraph signals
Giusi, Gino
Crupi, Felice
Pace, Calogero
2007 IEEE INSTRUMENTATION & MEASUREMENT TECHNOLOGY CONFERENCE, VOLS 1-5, 2007, : 965 - 968
[25] Temporal evolution of resonant transmission under telegraph noise
Gurvitz, Shmuel
Aharony, Amnon
Entin-Wohlman, Ora
PHYSICAL REVIEW B, 2016, 94 (07)
[26] Random Telegraph Noise Simulation and the Impact on Noise Sensitive Design
Lu, M. L.
Hung, C. M.
Fan, M. L.
Huang, Y. S.
Li, C. C.
Yuan, M. S.
Chang, C. H.
Chiang, C. S.
Su, K. W.
Lin, C. K.
2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD, 2023, : 113 - 116
[27] Random telegraph noise analysis in time domain
Yuzhelevski, Y
Yuzhelevski, M
Jung, G
REVIEW OF SCIENTIFIC INSTRUMENTS, 2000, 71 (04): : 1681 - 1688
[28] Mechanism of Random Telegraph Noise in 22-nm FDSOI-Based MOSFET at Cryogenic Temperatures
Ma, Yue
Bi, Jinshun
Wang, Hanbin
Fan, Linjie
Zhao, Biyao
Shen, Lizhi
Liu, Mengxin
NANOMATERIALS, 2022, 12 (23)
[29] Low-frequency noise spectrum of cyclo-stationary random telegraph signals
Gilson Wirth
Roberto da Silva
Electrical Engineering, 2008, 90 : 435 - 441
[30] Machine Learning Method for Accurate Analysis of Complicated Low Temperature Random Telegraph Noise
Li, Xinze
Sun, Ying
Wan, Jing
Chen, Bing
Cheng, Ran
Han, Genquan
2022 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT), 2022, : 20 - 23

← 1 2 3 4 5 →