Vertical heterojunction field-effect transistors utilizing re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates

被引：13

作者：

Yaegassi, Seiji ^{[1
]}

Okada, Masaya ^{[2
]}

Saitou, Yuu ^{[2
]}

Yokoyama, Mitsunori ^{[1
]}

Nakata, Ken ^{[1
]}

Katayama, Koji ^{[2
]}

Ueno, Masaki ^{[2
]}

Kiyama, Makoto ^{[2
]}

Katsuyama, Tsukuru ^{[1
]}

Nakamura, Takao ^{[2
]}

机构：

[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, 1 Taya, Yokohama, Kanagawa 2448588, Japan

[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期

关键词：

AlGaN; GaN; field-effect transistor; vertical; heterojunction; normally-off; GaN substrate;

D O I：

10.1002/pssc.201000439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vertical heterojunction field-effect transistors (VHFETs) utilizing re-grown AlGaN/GaN two-dimensional electron gas (2DEG) channels on free-standing GaN substrates have been developed. The VHFETs exhibited a specific on-resistance (RonA) of 7.6 m Omega cm(2) at a threshold voltage (V-th) of -1.1 V and a breakdown voltage (VB) of 672 V. The breakdown voltage and the figure of merit (VB2/RonA) are the highest among those of the GaN-based vertical transistors ever reported. It was demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and Al concentration. A normally-off operation was achieved with a 10-nm-thick Al0.2Ga0.8N layer. The possibility that VHFET with smaller current collapse phenomena than planar HEMT was revealed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：450 / 452

页数：3

共 50 条

[41] Nonpolar a-Plane AlGaN/GaN Heterostructure Field-Effect Transistors Grown on Freestanding GaN Substrate
Isobe, Yasuhiro
Ikki, Hiromichi
Sakakibara, Tatsuyuki
Iwaya, Motoaki
Takeuchi, Tetsuya
Kamiyama, Satoshi
Akasaki, Isamu
Sugiyama, Takayuki
Amano, Hiroshi
Imade, Mamoru
Kitaoka, Yasuo
Mori, Yusuke
APPLIED PHYSICS EXPRESS, 2011, 4 (06)
[42] Two-dimensional electron gas transport properties in AlGaN/GaN single- and double-heterostructure field effect transistors
Maeda, N
Saitoh, T
Tsubaki, K
Nishida, T
Kobayashi, N
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 82 (1-3): : 232 - 237
[43] Electroreflectance of the AlGaN/GaN heterostructure and two-dimensional electron gas
Kurtz, SR
Allerman, AA
Koleske, DD
Peake, GM
APPLIED PHYSICS LETTERS, 2002, 80 (24) : 4549 - 4551
[44] Characterization of an AlGaN/GaN two-dimensional electron gas structure
Saxler, A.
Debray, P.
Perrin, R.
Elhamri, S.
Mitchel, W.C.
Elsass, C.R.
Smorchkova, I.P.
Heying, B.
Haus, E.
Fini, P.
Ibbetson, J.P.
Keller, S.
Petroff, P.M.
DenBaars, S.P.
Mishra, U.K.
Speck, J.S.
1600, American Institute of Physics Inc. (87):
[45] Electrical transport of an AlGaN/GaN two-dimensional electron gas
Saxler, A
Debray, P
Perrin, R
Elhamri, S
Mitchel, WC
Elsass, CR
Smorchkova, LP
Heying, B
Haus, E
Fini, P
Ibbetson, JP
Keller, S
Petroff, PM
DenBaars, SP
Mishra, UK
Speck, JS
MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 2000, 5 : art. no. - W11.10
[46] Characterization of an AlGaN/GaN two-dimensional electron gas structure
Saxler, A
Debray, P
Perrin, R
Elhamri, S
Mitchel, WC
Elsass, CR
Smorchkova, IP
Heying, B
Haus, E
Fini, P
Ibbetson, JP
Keller, S
Petroff, PM
DenBaars, SP
Mishra, UK
Speck, JS
JOURNAL OF APPLIED PHYSICS, 2000, 87 (01) : 369 - 374
[47] Two-dimensional electron-gas density in AlxGa1-xN/GaN heterostructure field-effect transistors
Appl Phys Lett, 13 (1856):
[48] Two-dimensional electron-gas density in AlxGa1-xN/GaN heterostructure field-effect transistors
Maeda, N
Nishida, T
Kobayashi, N
Tomizawa, M
APPLIED PHYSICS LETTERS, 1998, 73 (13) : 1856 - 1858
[49] Modeling the Effect of the Two-Dimensional Hole Gas in a GaN/AlGaN/GaN Heterostructure
Ghosh, Joydeep
Laha, Apurba
Saha, Dipankar
Ganguly, Swaroop
2017 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2017), 2017, : 156 - 159
[50] Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
D. Yu. Protasov
T. V. Malin
A. V. Tikhonov
A. F. Tsatsulnikov
K. S. Zhuravlev
Semiconductors, 2013, 47 : 33 - 44

← 1 2 3 4 5 →