Vertical heterojunction field-effect transistors utilizing re-grown AlGaN/GaN two-dimensional electron gas channels on GaN substrates

被引：13
|
作者：
Yaegassi, Seiji [1 ]
Okada, Masaya [2 ]
Saitou, Yuu [2 ]
Yokoyama, Mitsunori [1 ]
Nakata, Ken [1 ]
Katayama, Koji [2 ]
Ueno, Masaki [2 ]
Kiyama, Makoto [2 ]
Katsuyama, Tsukuru [1 ]
Nakamura, Takao [2 ]
机构：
[1] Sumitomo Elect Ind Ltd, Transmiss Devices R&D Labs, 1 Taya, Yokohama, Kanagawa 2448588, Japan
[2] Sumitomo Elect Ind Ltd, Semicond Technol R&D Labs, Itami, Hyogo 6640016, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2 | 2011年 / 8卷 / 02期
关键词：
AlGaN; GaN; field-effect transistor; vertical; heterojunction; normally-off; GaN substrate;
D O I：
10.1002/pssc.201000439
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Vertical heterojunction field-effect transistors (VHFETs) utilizing re-grown AlGaN/GaN two-dimensional electron gas (2DEG) channels on free-standing GaN substrates have been developed. The VHFETs exhibited a specific on-resistance (RonA) of 7.6 m Omega cm(2) at a threshold voltage (V-th) of -1.1 V and a breakdown voltage (VB) of 672 V. The breakdown voltage and the figure of merit (VB2/RonA) are the highest among those of the GaN-based vertical transistors ever reported. It was demonstrated that the threshold voltage can be controlled by the thickness of AlGaN layers and Al concentration. A normally-off operation was achieved with a 10-nm-thick Al0.2Ga0.8N layer. The possibility that VHFET with smaller current collapse phenomena than planar HEMT was revealed. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：450 / 452
页数：3
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