Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz

被引：16
|
作者：
Spiessberger, Stefan [1 ]
Schiemangk, Max [2 ]
Sahm, Alexander [1 ]
Wicht, Andreas [1 ]
Wenzel, Hans [1 ]
Peters, Achim [2 ]
Erbert, Goetz [1 ]
Traenkle, Guenther [1 ]
机构：
[1] Leibniz Inst Hochstfrequenztech, Ferdinand Braun Inst, D-12489 Berlin, Germany
[2] Humboldt Univ, Inst Phys, D-12489 Berlin, Germany
来源：
OPTICS EXPRESS | 2011年 / 19卷 / 08期
关键词：
DFB LASERS; NOISE; AMPLIFIER; POWER; DIODES; NM;
D O I：
10.1364/OE.19.007077
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We demonstrate a compact, narrow-linewidth, high-power, micro-integrated semiconductor-based master oscillator power amplifier laser module which is implemented on a footprint of 50 x 10 mm(2). A micro-isolator between the oscillator and the amplifier suppresses optical feedback. The oscillator is a distributed Bragg reflector laser optimized for narrow-linewidth operation and the amplifier consists of a ridge waveguide entry and a tapered amplifier section. The module features stable single-mode operation with a FWHM linewidth of only 100 kHz and an intrinsic linewidth as small as 3.6 kHz for an output power beyond 1 W. (C) 2011 Optical Society of America
引用
收藏
页码：7077 / 7083
页数：7
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