Pulsed laser deposition of SrBi2Ta2O9 films on fused silica in waveguide form

被引：13

作者：

Yin, J ^{[1
]}

Wu, ZC ^{[1
]}

Wang, ZL ^{[1
]}

Zhu, YY ^{[1
]}

Liu, ZG ^{[1
]}

机构：

[1] Nanjing Univ, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1998年 / 31卷 / 22期

关键词：

D O I：

10.1088/0022-3727/31/22/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Polycrystalline SrBi2Ta2O9 film has been grown on fused silica by pulsed laser deposition at 700 degrees C. The wavelength dependence of the transmittance of the film was determined. We first obtained the band gap E-g = 4.0 eV. Favourable optical waveguiding properties have been demonstrated by observation of sharp m lines from the TE and TM multimodes. The surface and cross sectional morphology of the film was studied by scanning electron microscopy (SEM).

引用

页码：3185 / 3187

页数：3

共 50 条

[31] Characteristics of nanoparticles formed during pulsed laser ablation of SrBi2Ta2O9
Seol, Kwang Soo
Takeuchi, Kazuo
Miyagawa, Takeshi
Ohki, Yoshimichi
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (09): : 5654 - 5658
[32] Characteristics of nanoparticles formed during pulsed laser ablation of SrBi2Ta2O9
Seol, KS
Takeuchi, K
Miyagawa, T
Ohki, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2002, 41 (09): : 5654 - 5658
[33] Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
Appl Phys Lett, 5 (616):
[34] Temperature dependent leakage current behavior of pulsed laser ablated SrBi2Ta2O9 thin films
Roy, A.
Maity, S.
Dhar, A.
Bhattacharya, D.
Ray, S. K.
JOURNAL OF APPLIED PHYSICS, 2009, 105 (04)
[35] Metalorganic chemical vapor deposition of ferroelectric SrBi2Ta2O9 thin films
Li, TK
Zhu, YF
Desu, SB
Peng, CH
Nagata, M
APPLIED PHYSICS LETTERS, 1996, 68 (05) : 616 - 618
[36] Growth and characterization of SrBi2Ta2O9 thin films by chemical solution deposition
Chung, CW
Kim, HI
Byun, YH
JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2002, 8 (03) : 253 - 256
[37] The bandgap of SrBi2Ta2O9
Hartmann, AJ
Lamb, RN
Scott, JF
Gutleben, CD
INTEGRATED FERROELECTRICS, 1997, 18 (1-4) : 101 - 108
[38] Bandgap of SrBi2Ta2O9
Univ of New South Wales, Sydney
Integr Ferroelectr, 1 -4 pt 2 (101-108):
[39] Preparation and basic properties of SrBi2Ta2O9 films
Oishi, Y
Matsumuro, Y
Okuyama, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (9B): : 5896 - 5899
[40] Formation and properties of SrBi2Ta2O9 thin films
Nagata, M.
Vijay, D.P.
Zhang, X.
Desu, S.B.
Physica Status Solidi (A) Applied Research, 1996, 157 (01): : 75 - 82

← 1 2 3 4 5 →