Kinetic Monte Carlo simulation of Ta deposition on Ta (100) surface

被引：2
|
作者：
Kim, GS
Klug, D
Tse, J
Wu, P
机构：
[1] Natl Res Council Canada, Steacie Inst Mol Sci, Ottawa, ON K1A 0R6, Canada
[2] Inst High Performance Comp, Singapore, Singapore
来源：
JOURNAL OF MATERIALS SCIENCE | 2004年 / 39卷 / 04期
关键词：
D O I：
10.1023/B:JMSC.0000013933.25764.06
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A simulation tool based on the kinetic Monte Carlo method was developed to model the surface roughness of Ta deposition on Ta(100) surface. As such, the diffusion barriers were determined using the embedded atom potential. Surface roughness simulation results indicated that high substrate temperature and small deposition rates produce smoother films. Thus, the presented simulation codes can be used to obtain optimal operating conditions that satisfy surface roughness requirements.
引用
收藏
页码：1519 / 1522
页数：4
相关论文
共 50 条
  • [11] CoAl(001) surface structures: a kinetic Monte Carlo simulation
    Xu, Zhongjie
    Ni, Jun
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2009, 21 (44)
  • [12] Kinetic Monte Carlo simulations of Pd deposition and island growth on MgO(100)
    Xu, Lijun
    Campbell, Charles T.
    Jonsson, Hannes
    Henkelman, Graeme
    SURFACE SCIENCE, 2007, 601 (14) : 3133 - 3142
  • [13] Si(100)2x1 epitaxy: a kinetic Monte Carlo simulation of the surface growth
    Guenther, Vivien
    Mauss, Fabian
    EUROPEAN CONFERENCE ON NANO FILMS - ECNF2012, 2013, 40 : 56 - 64
  • [14] Kinetic Monte Carlo simulation of small vacancy clusters electromigration on clean and defective Cu(100) surface
    Kolesnikov, Sergey V.
    Saletsky, Alexander M.
    EUROPEAN PHYSICAL JOURNAL B, 2019, 92 (01):
  • [15] Kinetic Monte Carlo simulation of small vacancy clusters electromigration on clean and defective Cu(100) surface
    Sergey V. Kolesnikov
    Alexander M. Saletsky
    The European Physical Journal B, 2019, 92
  • [16] An integrated kinetic Monte Carlo molecular dynamics approach for film growth modeling and simulation:: ZrO2 deposition on Si(100) surface
    Knizhnik, AA
    Bagaturyants, AA
    Belov, IV
    Potapkin, BV
    Korkin, AA
    COMPUTATIONAL MATERIALS SCIENCE, 2002, 24 (1-2) : 128 - 132
  • [17] Kinetic lattice Monte Carlo simulations of processes on the silicon (100) surface
    Akis, R
    Ferry, DK
    Musgrave, CB
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 183 - 187
  • [18] STRUCTURE OF THE CLEAN TA(100) SURFACE
    TITOV, A
    MORITZ, W
    SURFACE SCIENCE, 1982, 123 (01) : L709 - L716
  • [19] The interaction of oxygen with (100)Ta surface
    Ishchuk, V.A.
    Kanash, O.V.
    Kunitskij, A.M.
    Petrenko, V.E.
    Ptushinskij, Yu.G.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 1994, (10-11): : 24 - 31
  • [20] Kinetic Monte Carlo Simulation of Deposition of Co Thin Film on Cu(001)
    刘祖黎
    石艳丽
    荆兴斌
    喻莉
    姚凯伦
    Plasma Science and Technology, 2007, (05) : 550 - 555
12345