Effect of Degenerate Carriers on Si Band Gap Narrowing

被引：2
|
作者：
Mazhukin, V. I. [1 ,2 ]
Koroleva, O. N. [1 ,2 ]
Mazhukin, A. V. [1 ,2 ]
Aleshchenko, Yu. A. [2 ,3 ]
机构：
[1] Russian Acad Sci, Keldysh Inst Appl Math, Miusskaya Pl 4, Moscow 125047, Russia
[2] Natl Res Nucl Univ MEPhI, Kashirskoe Sh 31, Moscow 115409, Russia
[3] Russian Acad Sci, Lebedev Phys Inst, Leninskii Pr 53, Moscow 119991, Russia
来源：
BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE | 2017年 / 44卷 / 07期
基金：
俄罗斯科学基金会;
关键词：
silicon; carrier concentration; quantum and classical statistics; band gap narrowing; TEMPERATURE-DEPENDENCE; ENERGY-GAP; PLASMAS;
D O I：
10.3103/S106833561707003X
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Various mechanisms causing band gap narrowing in strongly heated silicon are considered. In the high-temperature region, it becomes necessary to use Fermi-Dirac quantum statistics to describe carriers, since the silicon chemical potential appears in the valence band and in the conduction band at high carrier concentrations. It is shown that carrier degeneracy under conditions of sufficiently strong heating of intrinsic semiconductor causes strong band gap narrowing. The obtained values of band gap narrowing are compared to experimental results.
引用
收藏
页码：198 / 201
页数：4
相关论文
共 50 条
  • [21] Substantial band-gap narrowing of α-Si3N4 induced by heavy Al doping
    Xiao, W.
    Geng, W. T.
    PHYSICS LETTERS A, 2011, 375 (30-31) : 2874 - 2877
  • [22] Band gap narrowing of strained Si1-xGex as a function of Ge fraction, temperature and impurity concentration
    Jin, Hai-Yan
    Zhang, Li-Chun
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2001, 22 (09): : 1122 - 1126
  • [23] BAND-GAP NARROWING IN ORDERED AND DISORDERED SEMICONDUCTOR ALLOYS
    WEI, SH
    ZUNGER, A
    APPLIED PHYSICS LETTERS, 1990, 56 (07) : 662 - 664
  • [24] Magnetism and band gap narrowing in Cu-doped ZnO
    Ferhat, M.
    Zaoui, A.
    Ahuja, R.
    APPLIED PHYSICS LETTERS, 2009, 94 (14)
  • [25] Doping cuprous oxide with fluorine and its band gap narrowing
    Ye, Fan
    Zeng, Jun-Jie
    Cai, Xing-Min
    Su, Xiao-Qiang
    Wang, Bo
    Wang, Huan
    Roy, V. A. L.
    Tian, Xiao-Qing
    Li, Jian-Wei
    Zhang, Dong-Ping
    Fan, Ping
    Zhang, Jun
    JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 721 : 64 - 69
  • [26] BAND-GAP NARROWING IN SEMIINSULATING GALLIUM-ARSENIDE
    HRIVNAK, L
    JOURNAL OF APPLIED PHYSICS, 1987, 62 (08) : 3228 - 3233
  • [27] BAND-GAP NARROWING IN SEMI-INSULATING GAAS
    HRIVNAK, L
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1985, 127 (02): : K165 - K170
  • [28] Band Gap Narrowing and Widening of ZnO Nanostructures and Doped Materials
    Kamarulzaman, Norlida
    Kasim, Muhd Firdaus
    Rusdi, Roshidah
    NANOSCALE RESEARCH LETTERS, 2015, 10
  • [29] Band gap narrowing and radiative efficiency of silicon doped GaN
    Schenk, H. P. D.
    Borenstain, S. I.
    Berezin, A.
    Schoen, A.
    Cheifetz, E.
    Khatsevich, S.
    Rich, D. H.
    JOURNAL OF APPLIED PHYSICS, 2008, 103 (10)
  • [30] Quasiclassical calculation of narrowing of the band gap in silicon with heavy doping
    Poklonskii, NA
    Syaglo, AI
    Borovik, FN
    SEMICONDUCTORS, 1996, 30 (10) : 924 - 927
12345