Diamond field emission triode with low gate turn-on voltage and high gain

被引：3
|
作者：
Wisitsora-At, A [1 ]
Kang, WP [1 ]
Davidson, JL [1 ]
Kerns, DV [1 ]
Fisher, T [1 ]
机构：
[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
来源：
IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年
关键词：
D O I：
10.1109/IVMC.2001.939765
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Diamond field emission triode with very low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique on a silicon-on-insulator (SOI) wafer. I-a-V-g plot of emission characteristics with 4 tips shows a very low gate turn-on voltage of 10 V and high emission current of 6 muA at gate voltage of 20 V. I-a-V-a plots of emission characteristics demonstrate the desired saturation behavior of field emission transistor with a high voltage gain of 250. The low turn-on gate voltage and high gain factor comparable to solid-state devices, confirming the diamond field emission triode has significant potential for IC-compatible vacuum microelectronic applications and beyond.
引用
收藏
页码：285 / 286
页数：2
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