Diamond field emission triode with low gate turn-on voltage and high gain

被引：3

作者：

Wisitsora-At, A ^{[1
]}

Kang, WP ^{[1
]}

Davidson, JL ^{[1
]}

Kerns, DV ^{[1
]}

Fisher, T ^{[1
]}

机构：

[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA

来源：

IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年

关键词：

D O I：

10.1109/IVMC.2001.939765

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diamond field emission triode with very low gate turn-on voltage of 10 V and high gain factor of 250 is reported. The gated diamond triode was fabricated with a self-aligning gate technique on a silicon-on-insulator (SOI) wafer. I-a-V-g plot of emission characteristics with 4 tips shows a very low gate turn-on voltage of 10 V and high emission current of 6 muA at gate voltage of 20 V. I-a-V-a plots of emission characteristics demonstrate the desired saturation behavior of field emission transistor with a high voltage gain of 250. The low turn-on gate voltage and high gain factor comparable to solid-state devices, confirming the diamond field emission triode has significant potential for IC-compatible vacuum microelectronic applications and beyond.

引用

页码：285 / 286

页数：2

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