Broadband On-Chip Transmission Line Characterization Used in High-Speed and High-Frequency Communications

被引：0
|
作者：
Huang, Chien-Chang [1 ]
Fu, Wen-Tsao [1 ]
Cheng, Kuan-Chien [1 ]
机构：
[1] Yuan Ze Univ, Dept Elect Engn, Taoyuan, Taiwan
来源：
2021 IEEE INTERNATIONAL SYMPOSIUM ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY (RFIT) | 2021年
关键词：
CMOS; GaAs; GIPD; on-wafer calibration; reference impedance; transmission line; CHARACTERISTIC-IMPEDANCE; SERIES-RESISTOR;
D O I：
10.1109/RFIT52905.2021.9565308
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper presents the broadband characterization of on-chip transmission lines (TLs) in coplanar waveguide (CPW) for various semiconductor technologies, based on the calibration comparison technique. The commercial impedance standard substrate (ISS) is used as the first-tier calibration to the probe tips by using line-reflect-reflect-match (LRRM), then the second-tier multiline thru-reflect-line (TRL) calibration is performed to extract the TL propagation constant and characteristic impedance, provided the probe pad satisfies the shunt/series circuit model. The GaAs, glass integrated passive device (GIPD) and CMOS technologies in CPW are demonstrated for TL characterization from 2 GHz to 110 GHz, with verifications of another measurement method using a series resistor.
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页数：2
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