Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices

被引：0

作者：

Vandelli, L. ^{[1
]}

Padovani, A. ^{[1
]}

Larcher, L. ^{[1
]}

Broglia, G. ^{[2
]}

Ori, G. ^{[2
]}

Montorsi, M. ^{[2
]}

Bersuker, G. ^{[3
]}

Pavan, P. ^{[3
]}

机构：

[1] DISMI Univ Modena & Reggio Emilia, Reggio Emilia, Italy

[2] DIMA Univ Modena Reggio Emilia, Modena, Italy

[3] SEMATECH, Albany, NY USA

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.

引用

页数：4

共 50 条

[41] Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
Kim, Hee-Dong
Yun, Min Ju
Kim, Sungho
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2016, 69 (03) : 439 - 442
[42] Resistive switching phenomena of HfO2 films grown by MOCVD for resistive switching memory devices
Hee-Dong Kim
Min Ju Yun
Sungho Kim
Journal of the Korean Physical Society, 2016, 69 : 439 - 442
[43] Investigations of switching phenomena in Pt/HfO2/Ti/Pt memristive devices
Garda, Bartlomiej
Kasinski, Krzysztof
Ogorzalek, Maciej
Galias, Zbigniew
2017 EUROPEAN CONFERENCE ON CIRCUIT THEORY AND DESIGN (ECCTD), 2017,
[44] Analysis of quantum conductance, read disturb and switching statistics in HfO2 RRAM using conductive AFM
Ranjan, A.
Raghavan, N.
Molina, J.
O'Shea, S. J.
Shubhakar, K.
Pey, K. L.
MICROELECTRONICS RELIABILITY, 2016, 64 : 172 - 178
[45] Resistive Switching with Self-Rectifying Tunability and Influence of the Oxide Layer Thickness in Ni/HfO2/n+-Si RRAM Devices
Rodriguez-Fernandez, Alberto
Aldana, Samuel
Campabadal, Francesca
Sune, Jordi
Miranda, Enrique
Jimenez-Molinos, Francisco
Roldan, Juan Bautista
Gonzalez, Mireia Bargallo
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (08) : 3159 - 3166
[46] Microscopy study of the conductive filament in HfO2 resistive switching memory devices
Privitera, S.
Bersuker, G.
Butcher, B.
Kalantarian, A.
Lombardo, S.
Bongiorno, C.
Geer, R.
Gilmer, D. C.
Kirsch, P. D.
MICROELECTRONIC ENGINEERING, 2013, 109 : 75 - 78
[47] Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices
Gilad Zeevi
Alexander Katsman
Yuval E. Yaish
Journal of Electronic Materials, 2018, 47 : 1505 - 1511
[48] Stress-Induced Resistive Switching in Pt/HfO2/Ti Devices
Zeevi, Gilad
Katsman, Alexander
Yaish, Yuval E.
JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) : 1505 - 1511
[49] The behaviour of oxygen at metal electrodes in HfO2 based resistive switching devices
Bradley, Samuel R.
McKenna, Keith P.
Shluger, Alexander L.
MICROELECTRONIC ENGINEERING, 2013, 109 : 346 - 350
[50] Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in HfO2 RRAM
Raghavan, Nagarajan
Degraeve, Robin
Fantini, Andrea
Goux, Ludovic
Wouters, Dirk J.
Groeseneken, Guido
Jurczak, Malgorzata
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (05) : 614 - 616

← 1 2 3 4 5 →