Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices

被引：0

作者：

Vandelli, L. ^{[1
]}

Padovani, A. ^{[1
]}

Larcher, L. ^{[1
]}

Broglia, G. ^{[2
]}

Ori, G. ^{[2
]}

Montorsi, M. ^{[2
]}

Bersuker, G. ^{[3
]}

Pavan, P. ^{[3
]}

机构：

[1] DISMI Univ Modena & Reggio Emilia, Reggio Emilia, Italy

[2] DIMA Univ Modena Reggio Emilia, Modena, Italy

[3] SEMATECH, Albany, NY USA

来源：

2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work we apply a physical model based on charge transport and molecular mechanics/dynamics simulations to investigate the physical mechanisms governing the RRAM forming and switching operations. The proposed model identifies the major driving forces controlling conductive filament (CF) formation and changes during RRAM switching, thus providing a tool for investigation and optimization of RRAM devices.

引用

页数：4

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