Phase composition of gas sensitive thin films of tin oxide operating at near room temperature
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Mahdi, O. S.
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Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Al Muthanna Univ, Samawah, IraqSaratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Mahdi, O. S.
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Malyar, I. V.
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Saratov NG Chernyshevskii State Univ, Saratov 410012, RussiaSaratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Malyar, I. V.
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Zakharevich, A. M.
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Saratov NG Chernyshevskii State Univ, Saratov 410012, RussiaSaratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Zakharevich, A. M.
[1
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Smirnov, A. V.
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Saratov NG Chernyshevskii State Univ, Saratov 410012, RussiaSaratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Smirnov, A. V.
[1
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Sinev, I. V.
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Saratov NG Chernyshevskii State Univ, Saratov 410012, RussiaSaratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Sinev, I. V.
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Venig, S. B.
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Saratov NG Chernyshevskii State Univ, Saratov 410012, RussiaSaratov NG Chernyshevskii State Univ, Saratov 410012, Russia
Venig, S. B.
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[1] Saratov NG Chernyshevskii State Univ, Saratov 410012, Russia
We have studied the phase composition of thin polycrystalline tin oxide films deposited on silicon substrates by reactive RF magnetron sputtering. The films are sensitive to ethanol vapors at 38A degrees C. They consist of SnO2 crystallites with the average grain size of about 7 nm, covered with a nanodimensional layer of amorphous SnO phase. It was found that the volume fraction of the former phase is about 95% and that of the latter phase is about 5%. Calculations of the film texture indicate the predominant growth of SnO2 crystals along aOE (c) 110 >, aOE (c) 211 >, and aOE (c) 310 > crystal directions perpendicular to the substrate.
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Indian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttarakhand, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttarakhand, India
Singhal, Akshay V.
Chandra, Kamlesh
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Indian Inst Technol, Ctr Excellence Nanotechnol, Roorkee 247667, Uttarakhand, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttarakhand, India
Chandra, Kamlesh
Agarvvala, Vijaya
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Indian Inst Technol, Ctr Excellence Nanotechnol, Roorkee 247667, Uttarakhand, IndiaIndian Inst Technol, Dept Met & Mat Engn, Roorkee 247667, Uttarakhand, India
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Gich, Marti
Fina, Ignasi
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Max Planck Inst Microstruct Phys, D-06120 Halle, GermanyCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Fina, Ignasi
Morelli, Alessio
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Max Planck Inst Microstruct Phys, D-06120 Halle, Germany
Inst Phys ASCR, Dept Dielect, Prague 18221, Czech RepublicCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Morelli, Alessio
Sanchez, Florencio
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Sanchez, Florencio
Alexe, Marin
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Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, EnglandCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Alexe, Marin
Gazquez, Jaume
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Gazquez, Jaume
Fontcuberta, Josep
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain
Fontcuberta, Josep
Roig, Anna
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CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, SpainCSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain