Time-resolved measurement of charging on hole bottoms of SiO2 wafer exposed to plasma etching in a pulsed two-frequency capacitively coupled plasma

We experimentally demonstrate a time chart of the shading either of electrons or positive ions on a topologically patterned wafer exposed to plasma etching by synchronized measurements of bottom-charging potential in a SiO, hole, current components incident on the wafer, and optical emission CT in the interface in a pulsed two frequency capacitively coupled plasma. The present paper gives a history of charging affected dynamically by an instantaneous electrical response on the bottom.