Plastic relaxation of a film/substrate heterostructure by emission of screw threading dislocations

被引：2
|
作者：
Bonnet, Roland [1 ]
Youssef, Sami [2 ]
Neily, Salem [2 ]
Gutakowskii, A. K. [3 ]
机构：
[1] Univ Grenoble 1, CNRS, INPGrenoble, F-38402 St Martin Dheres, France
[2] Fac Sci Monastir, Unite Rech Phys Solide, Monastir 5019, Tunisia
[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
COMPTES RENDUS PHYSIQUE | 2008年 / 9卷 / 02期
关键词：
thin film; dislocations; transmission electron microscopy;
D O I：
10.1016/j.crhy.2008.01.005
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The system formed by a thin film coherent with a crystalline substrate can relax its internal energy by annealing. Threading dislocations emitted after ten minutes annealing at 350 degrees C of the Si0.68Ge0.32/Si(001) heterostructure are observed in transmission electron microscopy, and then identified by comparison to simulated images of angular dislocations placed in a semi infinite medium. They are of screw character, which explains the rapid coverage of the interface by 60 degrees dislocations oriented (110).
引用
收藏
页码：276 / 282
页数：7
相关论文
共 50 条
  • [41] Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel
    Khan, Muhammad Saddique Akbar
    Liao, Hui
    Yu, Guo
    Iqbal, Imran
    Lei, Menglai
    Lang, Rui
    Mi, Zehan
    Chen, Huanqing
    Zong, Hua
    Hu, Xiaodong
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2021, 134
  • [42] Role of Edge and Screw Dislocations in Composite System on the Plastic Deformation of Metals
    Jian JIANG and Chiwei LUNG(International Centre for Materials Physics
    Journal of Materials Science & Technology, 1996, (01) : 69 - 71
  • [43] Effect of edge and screw dislocations in composite system on the plastic deformation of metals
    Jiang, Jian
    Lung, Chiwei
    Journal of Materials Science and Technology, 1996, 12 (01): : 69 - 71
  • [44] Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness
    Bolkhovityanov, Yu. B.
    Gutakovskii, A. K.
    Deryabin, A. S.
    Sokolov, L. V.
    PHYSICS OF THE SOLID STATE, 2015, 57 (04) : 765 - 770
  • [45] STRAIN RELAXATION AND FORMATION OF SCREW DISLOCATIONS IN YBCO FILMS ON MGO SUBSTRATES
    BAUER, M
    BAUDENBACHER, F
    KINDER, H
    PHYSICA C, 1995, 246 (1-2): : 113 - 118
  • [46] Role of edge dislocations in plastic relaxation of GeSi/Si(001) heterostructures: Dependence of introduction mechanisms on film thickness
    Yu. B. Bolkhovityanov
    A. K. Gutakovskii
    A. S. Deryabin
    L. V. Sokolov
    Physics of the Solid State, 2015, 57 : 765 - 770
  • [47] Electrical characterization of 4H-SiC avalanche photodiodes containing threading edge and screw dislocations
    Berechman, R. A.
    Skowronski, M.
    Soloviev, S.
    Sandvik, P.
    JOURNAL OF APPLIED PHYSICS, 2010, 107 (11)
  • [48] Effect of screw threading dislocations and inverse domain boundaries in GaN on the shape of reciprocal-space maps
    Barchuk, Mykhailo
    Motylenko, Mykhaylo
    Lukin, Gleb
    Paetzold, Olf
    Rafaja, David
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2017, 50 : 555 - 560
  • [49] Reduction of threading screw dislocations in 4H-SiC crystals by physical vapor transport growth
    Hu, Guojie
    Zhong, Guanglei
    Yang, Xianglong
    Chen, Xiufang
    Xie, Xuejian
    Yu, Guojian
    Hu, Xiaobo
    Xu, Xiangang
    2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS, 2022, : 140 - 142
  • [50] Electronic structure analysis of threading screw dislocations in 4H-SiC using electron holography
    Chung, Suk
    Berechman, Ronen A.
    McCartney, Martha R.
    Skowronski, Marek
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (03)
12345