Plastic relaxation of a film/substrate heterostructure by emission of screw threading dislocations

被引：2
|
作者：
Bonnet, Roland [1 ]
Youssef, Sami [2 ]
Neily, Salem [2 ]
Gutakowskii, A. K. [3 ]
机构：
[1] Univ Grenoble 1, CNRS, INPGrenoble, F-38402 St Martin Dheres, France
[2] Fac Sci Monastir, Unite Rech Phys Solide, Monastir 5019, Tunisia
[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
COMPTES RENDUS PHYSIQUE | 2008年 / 9卷 / 02期
关键词：
thin film; dislocations; transmission electron microscopy;
D O I：
10.1016/j.crhy.2008.01.005
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The system formed by a thin film coherent with a crystalline substrate can relax its internal energy by annealing. Threading dislocations emitted after ten minutes annealing at 350 degrees C of the Si0.68Ge0.32/Si(001) heterostructure are observed in transmission electron microscopy, and then identified by comparison to simulated images of angular dislocations placed in a semi infinite medium. They are of screw character, which explains the rapid coverage of the interface by 60 degrees dislocations oriented (110).
引用
收藏
页码：276 / 282
页数：7
相关论文
共 50 条
  • [31] Threading dislocation reduction by SiGeC domains in SiGe/SiGeC heterostructure: Role of pure edge dislocations
    Wong, L. H.
    Ferraris, C.
    Wong, C. C.
    Liu, J. P.
    APPLIED PHYSICS LETTERS, 2006, 89 (23)
  • [32] A CPU on a plastic film substrate
    Takayama, T
    Ohno, Y
    Goto, Y
    Machida, A
    Fujita, M
    Maruyama, J
    Kato, K
    Koyama, J
    Yamazaki, S
    2004 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 2004, : 230 - 231
  • [33] Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
    Hamachi, Takeaki
    Tohei, Tetsuya
    Hayashi, Yusuke
    Imanishi, Masayuki
    Usami, Shigeyoshi
    Mori, Yusuke
    Sakai, Akira
    SCIENTIFIC REPORTS, 2023, 13 (01):
  • [34] Studies of the Distribution of Elementary Threading Screw Dislocations In 4H Silicon Carbide Wafer
    Chen, Yi
    Zhang, Ning
    Huang, XianRong
    Black, David R.
    Dudley, Michael
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 301 - +
  • [35] Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
    Takeaki Hamachi
    Tetsuya Tohei
    Yusuke Hayashi
    Masayuki Imanishi
    Shigeyoshi Usami
    Yusuke Mori
    Akira Sakai
    Scientific Reports, 13 (1)
  • [36] Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy
    Im, HJ
    Ding, Y
    Pelz, JP
    Heying, B
    Speck, JS
    PHYSICAL REVIEW LETTERS, 2001, 87 (10) : art. no. - 106802
  • [37] Inclined misfit dislocations in a film/substrate system
    Neily, Salem
    Youssef, Sami
    Gutakovskii, Anton
    Bonnet, Roland
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2011, 208 (08): : 1896 - 1901
  • [38] Studies on the heterostructure of Fe film on Si substrate
    Ge, YF
    Zhang, R
    Xiu, XQ
    Xie, ZL
    Gu, SL
    PRICM 5: THE FIFTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, PTS 1-5, 2005, 475-479 : 3753 - 3756
  • [39] Dynamic emission of screw dislocations from a propagating crack tip
    Tsai, YZ
    Lee, SB
    JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) : 2089 - 2093
  • [40] Role of edge and screw dislocations in composite system on the plastic deformation of metals
    Jiang, J
    Lung, CW
    JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 1996, 12 (01) : 69 - 71
12345