Plastic relaxation of a film/substrate heterostructure by emission of screw threading dislocations

被引：2
|
作者：
Bonnet, Roland [1 ]
Youssef, Sami [2 ]
Neily, Salem [2 ]
Gutakowskii, A. K. [3 ]
机构：
[1] Univ Grenoble 1, CNRS, INPGrenoble, F-38402 St Martin Dheres, France
[2] Fac Sci Monastir, Unite Rech Phys Solide, Monastir 5019, Tunisia
[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia
来源：
COMPTES RENDUS PHYSIQUE | 2008年 / 9卷 / 02期
关键词：
thin film; dislocations; transmission electron microscopy;
D O I：
10.1016/j.crhy.2008.01.005
中图分类号：
P1 [天文学];
学科分类号：
0704 ;
摘要：
The system formed by a thin film coherent with a crystalline substrate can relax its internal energy by annealing. Threading dislocations emitted after ten minutes annealing at 350 degrees C of the Si0.68Ge0.32/Si(001) heterostructure are observed in transmission electron microscopy, and then identified by comparison to simulated images of angular dislocations placed in a semi infinite medium. They are of screw character, which explains the rapid coverage of the interface by 60 degrees dislocations oriented (110).
引用
收藏
页码：276 / 282
页数：7
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