Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

被引：11

作者：

Kot, Dawid ^{[1
]}

Kissinger, Gudrun ^{[1
]}

Schubert, Markus Andreas ^{[1
]}

Klingsporn, Max ^{[1
]}

Huber, Andreas ^{[2
]}

Sattler, Andreas ^{[2
]}

机构：

[1] IHP, D-15236 Frankfurt, Germany

[2] Siltron AG, D-81737 Munich, Germany

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 07期

关键词：

silicon; oxygen precipitates; stoichiometry; electron energy loss spectroscopy; Fourier transform infrared spectroscopy; SI WAFERS; MORPHOLOGY; SPECTRA;

D O I：

10.1002/pssr.201510194

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff-Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of the stoichiometry of oxygen precipitates by EDX. The results show that both plate-like oxygen precipitates and a transitional form between plate-like and octahedral precipi- tates consist of SiO2. This was confirmed by EELS low loss spectra where the typical spectrum for amorphous SiO2 was observed. Moreover, the absorption band of plate-like precipitates at 1227 cm(-1) was found in the low temperature FTIR spectrum. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO2. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

引用

页码：405 / 409

页数：5

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