Composition of oxygen precipitates in Czochralski silicon wafers investigated by STEM with EDX/EELS and FTIR spectroscopy

被引：11
|
作者：
Kot, Dawid [1 ]
Kissinger, Gudrun [1 ]
Schubert, Markus Andreas [1 ]
Klingsporn, Max [1 ]
Huber, Andreas [2 ]
Sattler, Andreas [2 ]
机构：
[1] IHP, D-15236 Frankfurt, Germany
[2] Siltron AG, D-81737 Munich, Germany
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 07期
关键词：
silicon; oxygen precipitates; stoichiometry; electron energy loss spectroscopy; Fourier transform infrared spectroscopy; SI WAFERS; MORPHOLOGY; SPECTRA;
D O I：
10.1002/pssr.201510194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this work, we investigated the stoichiometry of oxygen precipitates in Czochralski silicon wafers. The thickness dependence of the Cliff-Lorimer sensitivity factor for the silicon/oxygen system was determined and applied for the investigation of the stoichiometry of oxygen precipitates by EDX. The results show that both plate-like oxygen precipitates and a transitional form between plate-like and octahedral precipi- tates consist of SiO2. This was confirmed by EELS low loss spectra where the typical spectrum for amorphous SiO2 was observed. Moreover, the absorption band of plate-like precipitates at 1227 cm(-1) was found in the low temperature FTIR spectrum. It was demonstrated that this band can only be simulated by the dielectric constants of amorphous SiO2. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)
引用
收藏
页码：405 / 409
页数：5
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