The effect of sulfur on the electrical properties of S and N co-doped ZnO thin films: experiment and first-principles calculations

被引：17

作者：

Niu, Wenzhe ^{[1
]}

Xu, Hongbin ^{[1
]}

Guo, Yanmin ^{[2
]}

Li, Yaguang ^{[1
]}

Ye, Zhizhen ^{[1
]}

Zhu, Liping ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Mat Sci & Engn, Hangzhou 310003, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2015年 / 17卷 / 26期

基金：

中国国家自然科学基金;

关键词：

P-TYPE CONDUCTIVITY; EPITAXY;

D O I：

10.1039/c5cp02434j

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

P-type sulphur-nitrogen (S-N) co-doped ZnO thin films are deposited and the effect of sulphur on the electrical properties is discussed. First-principles calculations indicate that the structure is most stable when the S atom is close to the N atom in the (0002) plane, implying that dual-doped ZnO is relatively feasible to approach. The partial density of states of S-N co-doped ZnO shows that the S impurity plays a vital role in forming the p-type conductivity.

引用

页码：16705 / 16708

页数：4

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