Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices

被引：6
|
作者：
Liu Zhang-Li [1 ,2 ]
Hu Zhi-Yuan [1 ,2 ]
Zhang Zheng-Xuan [1 ]
Shao Hua
Ning Bing-Xu [1 ,2 ]
Bi Da-Wei [1 ]
Chen Ming [1 ,2 ]
Zou Shi-Chang [1 ]
机构：
[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst Informat Technol, Shanghai 200050, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2011年 / 28卷 / 07期
关键词：
CMOS TECHNOLOGIES; THRESHOLD VOLTAGE; RADIATION; DEPENDENCE; MOSFETS; OXIDES;
D O I：
10.1088/0256-307X/28/7/070701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Total ionizing dose effects of different transistor sizes in a 0.18 mu m technology are studied by (60)Co gamma- ray irradiation. Significant threshold voltage shift is observed for the narrow channel devices, which is called the radiation induced narrow channel effect (RINCE). A charge sharing model is introduced to understand the phenomenon. The devices' characteristic degradations after irradiation, such as threshold voltage shift, increase in on-state current under different drain biases and substrate biases, are discussed in detail. Radiation induced oxide trapped charge at the edges of shallow trench isolation plays an important role in the RINCE. Narrow channel devices are susceptible to the total ionizing dose effect.
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页数：3
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