Total ionizing dose tests of Power Bipolar Transistors and SiC power devices for JUICE

被引：0
|
作者：
Steffens, Michael [1 ]
Hoeffgen, Stefan K. [1 ]
Poizat, Marc [2 ]
机构：
[1] Fraunhofer Inst Technol Trendanal INT, D-53879 Euskirchen, Germany
[2] European Space Agcy, Estec, NL-2200 AG Noordwijk, Netherlands
来源：
2017 17TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2017年
关键词：
Radiation effects; Total ionizing dose; ELDRS; Bipolar transistors; Silicon carbide; SiC; SiC Schottky diodes; SiC MOSFETs; SiC JFET;
D O I：
暂无
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We present radiation tests performed on Power bipolar transistors, which evaluated concerning their ELDRS sensitivity to TID levels up to 200 krad(Si) with Co60. Additionally a selection of commercial SiC power devices are tested with Co60 at high dose rates to TID levels of 1 Mrad(Si).
引用
收藏
页码：413 / 417
页数：5
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